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فیلتر نتایج
نتایج 1 تا 10 از مجموع 17
1
2
Journal Paper
Accurate Analytical Modeling of Drain Current of Heterojunction Tunneling Field Effect Transistor
Authors:
F. Peyravi
،
S. E. Hosseini
Year 1403
Publish place:
International Journal of Engineering (IJE) Issue 7، Vol 37
Pages:
12
| Language: English
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Journal Paper
Performance Analysis of a Steep-Slope Bi-channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor with Enhanced Band-to-Band Tunneling Current
Authors:
Zahra Ahangari
Year 1402
Publish place:
Journal of Applied Research in Electrical Engineering Issue 2، Vol 2
Pages:
8
| Language: English
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Journal Paper
Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension
Authors:
Morteza Rahimian
Year 1402
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 8
Pages:
19
| Language: English
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Journal Paper
Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate
Authors:
Mahdi Mohammadkhani Ghiasvand
،
Zahra Ahangari
،
Hamed Nematian
Year 1401
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 7
Pages:
18
| Language: English
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Journal Paper
Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor
Authors:
Zahra Ahangari
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 5
Pages:
12
| Language: English
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Journal Paper
Effects of the Channel Length on the Nanoscale Field Effect Diode Performance
Authors:
arash rezaei
،
Bahram Azizollah-Ganji
،
Morteza Gholipour
Year 1397
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 3
Pages:
12
| Language: English
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Conference Paper
Novel Structures of Double Gate Ferroelectric Dopingless Tunneling Field-Effect Transistors
Authors:
Saeid Marjani
Year 1402
Publish place:
The 8th International Conference on Technology Development in Electrical Engineering in Iran
Pages:
7
| Language: English
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Conference Paper
Effect of Mid-Gap States on Performance of Tunneling Field-Effect Transistor Based on Antimonene
Authors:
Hossein N.Niknezhad
،
Shoeib Babaee Touski
Year 1402
Publish place:
3rd Intl. Conf. on Researches in Nanotechnology & Nanoscience
Pages:
10
| Language: English
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Conference Paper
Investigating the methods of improving the performance of field effect diode for use in nanotechnology
Authors:
Eslam Dost Amir Mahdi
،
Khoshnud Mostafa
Year 1402
Publish place:
The second conference of electricity, mechanics, aerospace, computer and engineering sciences
Pages:
12
| Language: English
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Conference Paper
Two Dimensional Analytical Modeling and Simulation for Junctionless Tunneling Field Effect Transistors
Authors:
Morteza Rahimian
Year 1401
Publish place:
The 7th International Conference on Electrical Engineering, Computer Science and Information Technology
Pages:
15
| Language: English
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نتایج 1 تا 10 از مجموع 17
1
2